New classes of Si-based photonic materials and device architectures via designer molecular routes

John Kouvetakis; Andrew V. G. Chizmeshya

doi:10.1039/B618416B

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Journal of Materials Chemistry

Issue 17, 2007

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New classes of Si-based photonic materials and device architectures via designer molecular routes

John Kouvetakis and Andrew V. G. Chizmeshya

J. Mater. Chem., 2007, 17, 1649-1655

DOI: 10.1039/B618416B
Received 18 Dec 2006, Accepted 22 Feb 2007
First published on the web 09 Mar 2007

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Abstract
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Ge/Sn-based group IV semiconductors with tunable band gaps across the wide IR range were synthesized using designer hydrides with tailored Si, Ge and Sn stoichiometries and structures. GeSn, SiGeSn, SiSn and SiGeSn/Ge heterostructures undergo indirect to direct band gap transitions via strain engineering and alloy composition tuning, providing the basis for integration of microelectronics with optical components into a single chip. SiGeSn systems also enable buffer layer technologies with unprecedented lattice and thermal matching capabilities for applications in monolithic integration of III–V semiconductors with Si electronics.

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Journal of Materials Chemistry

New classes of Si-based photonic materials and device architectures via designer molecular routes

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