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Issue 14, 2007
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Doping effect of solution-processed thin-film transistors based on polyfluorene

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Abstract

We report the fabrication of solution-processable organic thin-film transistors (OTFTs) based on poly(9,9′-dioctylfluorene-alt-bithiophene) (F8T2) doped with an electron-acceptor, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ). The 8% doping of the F8T2 film was found to result in an increased hole mobility, up to 0.01 cm2 V−1 s−1, and in an improved on/off ratio, as well as in a low off-current, of the order of 10−11 A. The doped F8T2 device was also found to exhibit a better threshold voltage and reduced hysteresis behavior. These improvements in performance are attributed to the formation of the F8T2-F4TCNQ complex, which results in better hole injection and improved device stability.

Graphical abstract: Doping effect of solution-processed thin-film transistors based on polyfluorene

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Publication details

The article was received on 30 Oct 2006, accepted on 11 Dec 2006 and first published on 15 Jan 2007


Article type: Paper
DOI: 10.1039/B615720C
Citation: J. Mater. Chem., 2007,17, 1416-1420
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    Doping effect of solution-processed thin-film transistors based on polyfluorene

    E. Lim, B. Jung, M. Chikamatsu, R. Azumi, Y. Yoshida, K. Yase, L. Do and H. Shim, J. Mater. Chem., 2007, 17, 1416
    DOI: 10.1039/B615720C

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