Jump to main content
Jump to site search

Issue 24, 2006
Previous Article Next Article

Synthesis and thin film electronic properties of two pyrene-substituted oligothiophene derivatives

Author affiliations

Abstract

The synthesis and the electric properties of two new pyrene end-substituted oligothiophene derivatives (Py-nT, n = 2,4) are described. The highest hole mobility (ca. 10−3 cm2 V−1 s−1) was obtained for vacuum evaporated thin films of Py-4T as the active layer in field effect transistors based on hexamethyldisilazane-treated SiO2/Si substrates. Moreover, Py-nT thin films were doped with molecular iodine, which led to a 106 fold increase of electric conductivity. In the case of Py-4T, a value of 1 S cm−1 was obtained after 21 minutes exposure to iodine vapor.

Graphical abstract: Synthesis and thin film electronic properties of two pyrene-substituted oligothiophene derivatives

Back to tab navigation

Publication details

The article was received on 09 Feb 2006, accepted on 05 Apr 2006 and first published on 03 May 2006


Article type: Paper
DOI: 10.1039/B601870J
Citation: J. Mater. Chem., 2006,16, 2380-2386
  •   Request permissions

    Synthesis and thin film electronic properties of two pyrene-substituted oligothiophene derivatives

    F. Moggia, C. Videlot-Ackermann, J. Ackermann, P. Raynal, H. Brisset and F. Fages, J. Mater. Chem., 2006, 16, 2380
    DOI: 10.1039/B601870J

Search articles by author

Spotlight

Advertisements