Jump to main content
Jump to site search

Issue 19, 2005
Previous Article Next Article

Deposition of HfO2 and ZrO2 films by liquid injection MOCVD using new monomeric alkoxide precursors

Author affiliations

Abstract

Thin films of ZrO2 and HfO2 have been deposited by liquid injection MOCVD using the new alkoxide precursors [Zr(OBut)2(dmop)2] (1) and [Hf(OBut)2(dmop)2] (2) [dmop = 2-(4,4-dimethyloxazolinyl)-propanolate]. The crystal structures of 1 and 2 have been determined, and they are shown to be six-coordinate monomeric complexes. They are volatile, and are significantly less reactive to air and moisture than existing Zr and Hf alkoxide precursors such as [Zr(OBut)4] and [Hf(OBut)4]. The ZrO2 and HfO2 thin films were deposited over substrate temperatures ranging from 350–550 °C. Analysis by X-ray diffraction shows that the films were deposited in the thermodynamically stable α- or monoclinic phase, and Auger electron spectroscopy shows that the ZrO2 and HfO2 films are non-stoichiometric and that carbon (1.9–8 at%) was present in the oxide films.

Graphical abstract: Deposition of HfO2 and ZrO2 films by liquid injection MOCVD using new monomeric alkoxide precursors

Back to tab navigation

Supplementary files

Publication details

The article was received on 15 Nov 2004, accepted on 24 Feb 2005 and first published on 11 Mar 2005


Article type: Paper
DOI: 10.1039/B417389A
Citation: J. Mater. Chem., 2005,15, 1896-1902
  •   Request permissions

    Deposition of HfO2 and ZrO2 films by liquid injection MOCVD using new monomeric alkoxide precursors

    Y. F. Loo, R. O'Kane, A. C. Jones, H. C. Aspinall, R. J. Potter, P. R. Chalker, J. F. Bickley, S. Taylor and L. M. Smith, J. Mater. Chem., 2005, 15, 1896
    DOI: 10.1039/B417389A

Search articles by author

Spotlight

Advertisements