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Issue 23, 2005
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Morphological and structural control of nanostructured <100> oriented CeO2 films grown on random metallic substrates

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Abstract

CeO2 (cubic fluorite) thin films have been deposited on no-rolled Hastelloy C276 substrates by metal-organic chemical vapour deposition (MOCVD) from the Ce(hfa)3·diglyme [Hhfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione; diglyme = (CH3O(CH2CH2O)2CH3)] precursor. The X-ray patterns of all samples grown in the 350–550 °C temperature range point to the formation of <100> oriented CeO2 films, while at higher deposition temperatures (650–850 °C) random CeO2 films are formed. XRD data indicate that 450 °C is the best deposition temperature. Detailed studies of the influence of all deposition parameters (precursor vaporization temperature, O2 and Ar gas flows, deposition temperature and time) on the CeO2 film growth have been carried out. There is evidence that the deposition process occurs in a mass transport regime. A suitable rationale for the observed textural changes vs. temperature has been proposed and the present columnar grain morphology, depending upon deposition temperatures, has been related to the zone model proposed by Mochvan and Demchishin for physical vapour deposition processes.

Graphical abstract: Morphological and structural control of nanostructured <100> oriented CeO2 films grown on random metallic substrates

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Publication details

The article was received on 12 Nov 2004, accepted on 20 Apr 2005 and first published on 03 May 2005


Article type: Paper
DOI: 10.1039/B417292B
Citation: J. Mater. Chem., 2005,15, 2328-2337
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    Morphological and structural control of nanostructured <100> oriented CeO2 films grown on random metallic substrates

    R. Lo Nigro, R. G. Toro, G. Malandrino and I. L. Fragalà, J. Mater. Chem., 2005, 15, 2328
    DOI: 10.1039/B417292B

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