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Issue 31, 2005
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GaS and GaSe nanowalls and their transformation to Ga2O3 and GaN nanowalls

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Abstract

Two-dimensional nanowalls of GaS and GaSe are obtained by thermal exfoliation around 900 °C, and transformed to Ga2O3 and GaN nanowalls upon reaction with air and ammonia respectively at 800 °C, while maintaining dimensional integrity.

Graphical abstract: GaS and GaSe nanowalls and their transformation to Ga2O3 and GaN nanowalls

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Publication details

The article was received on 12 May 2005, accepted on 09 Jun 2005 and first published on 11 Jul 2005


Article type: Communication
DOI: 10.1039/B506676J
Citation: Chem. Commun., 2005,0, 3995-3997
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    GaS and GaSe nanowalls and their transformation to Ga2O3 and GaN nanowalls

    U. K. Gautam, S. R. C. Vivekchand, A. Govindaraj and C. N. R. Rao, Chem. Commun., 2005, 0, 3995
    DOI: 10.1039/B506676J

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