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Issue 12, 2003
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Tetrathiafulvalene-based conducting deposits on silicon substrates

Sylvain Caillieux,a  Dominique de Caro,*a  Lydie Valade,*a  Mario Basso-Bert,a  Christophe Faulmann,a  Isabelle Malfant,a  Hélène Casellas,a  Lahcène Ouahab,b  Jordi Fraxedasc  and  Antoine Zwickd 
Author affiliations

* Corresponding authors

a Laboratoire de Chimie de Coordination (CNRS UPR 8241), CNRS, 205, route de Narbonne, France
E-mail: decaro@lcc-toulouse.fr
Fax: +33 (0)5-61-55-30-03
Tel: +33 (0)5-61-33-31-37

b Laboratoire de Chimie du Solide et Inorganique Moléculaire (CNRS UMR 6511), Université de Rennes 1, Institut de Chimie de Rennes, Rennes cedex, France
E-mail: lahcene.ouahab@univ-rennes1.fr

c Institut de Ciència de Materials de Barcelona (CSIC), Campus de la UAB, Bellaterra, Spain
E-mail: fraxedas@icmab.es

d Laboratoire de Physique des Solides (CNRS UMR 5477), 118 route de Narbonne, Toulouse cedex 4, France
E-mail: Antoine.Zwick@lpst.ups-tlse.fr

Abstract

Tetrathiafulvalene-based molecular conductors, namely [TTF][TCNQ], (TTF)6[N(C2H5)4](HPM12O40) (M = W, Mo), and TTF[Ni(dmit)2]2 have been processed as thin films on microrough (001)-oriented silicon substrates using three different techniques. CVD-grown [TTF][TCNQ] deposits consist of platelets (10 × 5 µm) and filaments (diameter ∼1 µm). CN stretching modes in the infrared spectrum and CC stretching modes in the Raman spectrum are in agreement with a charge transfer of ∼0.6 from the TTF donor to the TCNQ acceptor. The N(1s) photoelectron spectrum confirms the presence of a reduced tetracyanoquinodimethane moiety. The films exhibit a semiconducting behaviour with a room-temperature conductivity of ∼0.4 S cm−1. Deposits of (TTF)6[N(C2H5)4](HPW12O40) are electrodeposited on microrough Si(001) at constant current from TTF and [N(C2H5)4]3(PW12O40) in acetonitrile solution. The films are made of stacked sheets (5 < thickness < 25 µm). Vibrational spectra, conductivity measurements and magnetic susceptibility data are similar to those obtained on single crystals of (TTF)6[N(C2H5)4](HPW12O40) grown on a platinum electrode. Thin films of TTF[Ni(dmit)2]2 are grown on microrough Si(001) by an adsorption process in organic solution. The deposits are characterized by Raman micro-probe and exhibit a pseudo-metallic behaviour with a room-temperature conductivity of about 2 S cm−1.

Graphical abstract: Tetrathiafulvalene-based conducting deposits on silicon substrates

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Publication details

The article was received on 23 Jul 2003, accepted on 11 Sep 2003 and first published on 13 Oct 2003


Article type: Paper
DOI: 10.1039/B308533C
Citation: J. Mater. Chem., 2003,13, 2931-2936
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    Tetrathiafulvalene-based conducting deposits on silicon substrates

    S. Caillieux, D. de Caro, L. Valade, M. Basso-Bert, C. Faulmann, I. Malfant, H. Casellas, L. Ouahab, J. Fraxedas and A. Zwick, J. Mater. Chem., 2003, 13, 2931
    DOI: 10.1039/B308533C

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