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Issue 4, 2003
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Deposition of thin films of cobalt oxides by MOCVD

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Abstract

The Co(hfa)2·2H2O (hfa = CF3C(O)CHC(O)CF3) precursor was used in MOCVD experiments to deposit cobalt oxides, on optically transparent SiO2 substrates. CoO and Co3O4 films have been obtained depending on the adopted deposition conditions. XRD measurements provided evidence that CoO consists of cubic, (100) oriented crystals, whilst Co3O4 films are only partially oriented along the (311) direction. Mean crystallite sizes were evaluated from the XRD line broadening and the band-gap for Co3O4 was determined from the optically induced transitions. Both optical spectra and resistivity measurements of Co3O4 thin films showed that they are semi-conducting. The surface structure of the films was investigated by XPS.

Graphical abstract: Deposition of thin films of cobalt oxides by MOCVD

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Publication details

The article was received on 29 Nov 2002, accepted on 17 Feb 2003 and first published on 26 Feb 2003


Article type: Paper
DOI: 10.1039/B211861K
Citation: J. Mater. Chem., 2003,13, 861-865
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    Deposition of thin films of cobalt oxides by MOCVD

    A. Gulino, G. Fiorito and I. Fragalà, J. Mater. Chem., 2003, 13, 861
    DOI: 10.1039/B211861K

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