Jump to main content
Jump to site search

Issue 8, 2003
Previous Article Next Article

Extended vapor–liquid–solid growth and field emission properties of aluminium nitride nanowires

Author affiliations

Abstract

Hexagonal AlN (h-AlN) nanowires with an average diameter of around 15 nm have been prepared by an extended vapor–liquid–solid growth technique and characterized by X-ray diffraction, transmission electron microscopy, energy dispersive X-ray analysis, Raman spectroscopy and field emission measurements. This preparation is a rather simple route for bulk fabrication of h-AlN nanowires. The promising field emission property observed for h-AlN nanowires points to the important application potential of this material.

Graphical abstract: Extended vapor–liquid–solid growth and field emission properties of aluminium nitride nanowires

Back to tab navigation

Publication details

The article was received on 09 Apr 2003, accepted on 28 May 2003 and first published on 12 Jun 2003


Article type: Paper
DOI: 10.1039/B303987K
Citation: J. Mater. Chem., 2003,13, 2024-2027
  •   Request permissions

    Extended vapor–liquid–solid growth and field emission properties of aluminium nitride nanowires

    Q. Wu, Z. Hu, X. Wang, Y. Lu, K. Huo, S. Deng, N. Xu, B. Shen, R. Zhang and Y. Chen, J. Mater. Chem., 2003, 13, 2024
    DOI: 10.1039/B303987K

Search articles by author

Spotlight

Advertisements