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Issue 6, 2002
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The dual source APCVD of titanium nitride thin films from reaction of hexamethyldisilazane and titanium tetrachloride

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Abstract

Atmospheric pressure chemical vapour deposition reaction of TiCl4 and NH(SiMe3)2 at 300–550 °C produced films of titanium nitride on glass substrates. The films were gold or purple/gold in colour, highly reflective in the infrared but with significant transmittance in the visible. Growth rates were typically 300 nm min−1 at 550 °C. The films were uniform, adhesive, abrasive resistant, conformal and hard, being resistant to scratching with a steel scalpel. They also showed no change in optical properties on immersion in common solvents or dilute acids or alkalis (2 M). X-Ray diffraction showed preferred growth in the (2 0 0) direction, typical cell constants of 4.23(1) Å and a crystallite size of ca. 200 Å. Raman spectra matched powder samples. SEM indicated the films were composed of ca. 200 nm particles. EDAX and electron probe studies showed no carbon or silicon impurities and a titanium to nitrogen ratio corresponding to TiN0.95. X-Ray photoelectron spectroscopy gave binding energy shifts for Ti2p3/2 and N1s at 455.8 and 396.9 eV respectively. The sheet resistance of the films showed increase conductivity with deposition temperature. The titanium nitride films showed potential for heat mirror applications.

Graphical abstract: The dual source APCVD of titanium nitride thin films from reaction of hexamethyldisilazane and titanium tetrachloride

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Publication details

The article was received on 25 Feb 2002, accepted on 10 Apr 2002 and first published on 29 Apr 2002


Article type: Paper
DOI: 10.1039/B201974B
Citation: J. Mater. Chem., 2002,12, 1906-1909
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    The dual source APCVD of titanium nitride thin films from reaction of hexamethyldisilazane and titanium tetrachloride

    A. Newport, C. J. Carmalt, I. P. Parkin and S. A. O'Neill, J. Mater. Chem., 2002, 12, 1906
    DOI: 10.1039/B201974B

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