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Issue 11, 2002
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Photoelectrochemical reactions at the n-GaN electrode in 1 M H2SO4 and in acidic solutions containing Cl ions

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Abstract

The photoelectrochemical behaviour of n-GaN in contact with 1 M H2SO4 and with acidic solutions containing Cl ions was studied using rotating-ring-disk voltammetry, electrochemical impedance spectroscopy and etching experiments. It was found that n-GaN is stabilized against photoanodic decomposition in the presence of Cl ions due to the competing oxidation of Cl to Cl2. The competition kinetics were interpreted on the basis of a mechanism, in which intrinsic surface states take part in the photoanodic oxidation of Cl. The participation of such intrinsic surface states may explain the discrepancies found in the literature concerning the photoelectrochemical behaviour of n-GaN.

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Publication details

The article was received on 26 Nov 2001, accepted on 08 Feb 2002 and first published on 25 Apr 2002


Article type: Paper
DOI: 10.1039/B110839P
Citation: Phys. Chem. Chem. Phys., 2002,4, 2301-2306
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    Photoelectrochemical reactions at the n-GaN electrode in 1 M H2SO4 and in acidic solutions containing Cl ions

    I. M. Huygens, A. Theuwis, W. P. Gomes and K. Strubbe, Phys. Chem. Chem. Phys., 2002, 4, 2301
    DOI: 10.1039/B110839P

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