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Issue 1, 2001
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Structural information from ion mobility measurements: applications to semiconductor clusters

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Abstract

Ion mobility measurements are one of the few methods presently available that can directly probe the structures of relatively large molecules in the gas phase. Here we review the application of ion mobility methods to the elucidation of the structures of semiconductor clusters (Sin, Gen, and Snn). We describe the new high-resolution implementation of the technique and the advanced methods of mobility calculations that are crucial for the correct analysis of the experimental data.

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Publication details

The article was received on 14 Aug 2000 and first published on 21 Dec 2000


Article type: Review Article
DOI: 10.1039/A802099J
Citation: Chem. Soc. Rev., 2001,30, 26-35
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    Structural information from ion mobility measurements: applications to semiconductor clusters

    A. A. Shvartsburg, R. R. Hudgins, P. Dugourd and M. F. Jarrold, Chem. Soc. Rev., 2001, 30, 26
    DOI: 10.1039/A802099J

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