Issue 8, 1994

Growth of ZnO by MOCVD using alkylzinc alkoxides as single-source precursors

Abstract

Thin films of ZnO have been grown by low-pressure MOCVD using methylzinc isopropoxide, MeZn(OPri), and methylzinc tert-butoxide, MeZn(OBut), in the absence of an added oxygen source. The films were grown on to glass substrates in the temperature range 250–400 °C with growth rates of between 0.2 and 4.4 µm h–1.

Article information

Article type
Paper

J. Mater. Chem., 1994,4, 1249-1253

Growth of ZnO by MOCVD using alkylzinc alkoxides as single-source precursors

J. Auld, D. J. Houlton, A. C. Jones, S. A. Rushworth, M. A. Malik, P. O'Brien and G. W. Critchlow, J. Mater. Chem., 1994, 4, 1249 DOI: 10.1039/JM9940401249

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