Jump to main content
Jump to site search

Issue 4, 1986
Previous Article Next Article

Recent advances in microelectronic ion-sensitive devices (ISFETs). The operational transducer

Abstract

The development of ion-selective field-effect transistors (ISFETs), their advantages over ion-selective electrodes (ISEs), and their intrinsic disadvantages are reviewed. Some of these disadvantages can be overcome by utilising the ISFET as the integral element in an analogue circuit to provide an operational transducer on a 2 × 2.5 mm silicon chip. The resultant device has small thermal sensitivity and linear response. The performance of a nitrate ion-sensitive device, appraised by a continuous dilution, computer-controlled technique, is described. Successful, and adequate, encapsulation of the semiconductor excluding the chemosensitive gate region is mandatory, and recent improvements to the polyimide–photopolymer process are described.

Back to tab navigation

Article type: Paper
DOI: 10.1039/F19868201209
Citation: J. Chem. Soc., Faraday Trans. 1, 1986,82, 1209-1215
  •   Request permissions

    Recent advances in microelectronic ion-sensitive devices (ISFETs). The operational transducer

    A. K. Covington and P. D. Whalley, J. Chem. Soc., Faraday Trans. 1, 1986, 82, 1209
    DOI: 10.1039/F19868201209

Search articles by author

Spotlight

Advertisements