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Issue 9, 1983
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Alternating-current techniques in semiconductor electrochemistry

Martin P. Dare-Edwards,  Andrew Hamnett  and  Peter R. Trevellick 

Abstract

A new theory of alternating-current effects in semiconductors is presented. The equivalent circuit used by a large number of workers to describe the effects of electroactive surface states is shown to have a firm physical basis at the molecular level, and the connection between the empirically derived circuit elements and such microscopic parameters as rate constants and surface-state densities is given. The implementation of programs designed to obtain such circuit elements from the raw experimental data is described and some examples of the theory are given.

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Article type: Paper
DOI: 10.1039/F19837902111
Citation: J. Chem. Soc., Faraday Trans. 1, 1983,79, 2111-2124
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    Alternating-current techniques in semiconductor electrochemistry

    M. P. Dare-Edwards, A. Hamnett and P. R. Trevellick, J. Chem. Soc., Faraday Trans. 1, 1983, 79, 2111
    DOI: 10.1039/F19837902111

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