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Issue 48, 2013
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Nitrogen-doped cuprous oxide as a p-type hole-transporting layer in thin-film solar cells

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Abstract

We demonstrate the potential of a nitrogen-doped cuprous oxide (Cu2O:N) film as a p-type hole-transporting layer for photovoltaic devices. To reduce back-contact resistance and create an electron-reflecting back surface field, high carrier density and appropriate work function are desired for the layer. Its electrical and optical properties can be appropriately tuned via nitrogen-doping to create a semi-transparent tunnel junction to a back-contact. We fabricate Cu2O-based heterojunction thin-film solar cells and insert a 20 nm-thick Cu2O:N hole-transporting layer between a silver back-contact and a Cu2O light-absorbing layer. The insertion of a 20 nm-thick Cu2O:N layer results in sizeable enhancements of fill-factor and power conversion efficiency of the solar cells. Cu2O:N thin-films may also be useful in other photovoltaic material systems, improving their back-contact properties as well as widening the range of possible back-contact materials.

Graphical abstract: Nitrogen-doped cuprous oxide as a p-type hole-transporting layer in thin-film solar cells

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Publication details

The article was received on 03 Sep 2013, accepted on 17 Oct 2013, published on 18 Oct 2013 and first published online on 18 Oct 2013


Article type: Paper
DOI: 10.1039/C3TA13208K
Citation: J. Mater. Chem. A, 2013,1, 15416-15422
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    Nitrogen-doped cuprous oxide as a p-type hole-transporting layer in thin-film solar cells

    Y. S. Lee, J. Heo, M. T. Winkler, S. C. Siah, S. B. Kim, R. G. Gordon and T. Buonassisi, J. Mater. Chem. A, 2013, 1, 15416
    DOI: 10.1039/C3TA13208K

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