Issue 18, 2017
From the journal:

Dalton Transactions

Atomic layer deposition of Cu(i) oxide films using Cu(ii) bis(dimethylamino-2-propoxide) and water†

J. R. Avila, ORCID logo ab   A. W. Peters,ab   Zhanyong Li, ORCID logo a   M. A. Ortuño,c   A. B. F. Martinson, ORCID logo bd   C. J. Cramer,c   J. T. Hupp*abd  and  O. K. Farha*ae  

* Corresponding authors

a Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA
E-mail: o-farha@northwestern.edu, j-hupp@northwestern.edu

b Argonne-Northwestern Solar Energy Research (ANSER) Center, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208, USA

c Department of Chemistry, Chemical Theory Center, and Supercomputing Institute, University of Minnesota, Minneapolis, Minnesota 55455, USA

d Argonne National Laboratory, 9700 S. Cass Ave., Argonne, IL 60439, USA

e King Abdulaziz University, Faculty of Science, Department of Chemistry, Jeddah, Saudi Arabia

Abstract

To grow films of Cu2O, bis-(dimethylamino-2-propoxide)Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal–oxide films featuring Cu(I).

Graphical abstract: Atomic layer deposition of Cu(i) oxide films using Cu(ii) bis(dimethylamino-2-propoxide) and water

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Article information

DOI
https://doi.org/10.1039/C6DT02572B
Article type
Communication
Submitted
27 Jun 2016
Accepted
03 Apr 2017
First published
03 Apr 2017

Dalton Trans., 2017,46, 5790-5795

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Atomic layer deposition of Cu(I) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water

J. R. Avila, A. W. Peters, Z. Li, M. A. Ortuño, A. B. F. Martinson, C. J. Cramer, J. T. Hupp and O. K. Farha, Dalton Trans., 2017, 46, 5790 DOI: 10.1039/C6DT02572B

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