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Issue 4, 2017
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Gate tunable photovoltaic effect in MoS2 vertical p–n homostructures

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Abstract

p–n junctions based on vertically stacked single or few-layer transition metal dichalcogenides (TMDCs) have attracted substantial scientific interest. Due to the propensity of TMDCs to show exclusively one type of conductivity, n- or p-type, heterojunctions of different materials are typically fabricated to produce diode-like current rectification and photovoltaic response. Recently, artificial, stable and substitutional doping of MoS2 into n- and p-type materials has been demonstrated. MoS2 is an interesting material for use in optoelectronic applications due to its potential of low-cost production in large quantities, strong light–matter interactions and chemical stability. Here we report the characterization of the optoelectronic properties of vertical homojunctions made by stacking few-layer flakes of MoS2:Fe (n-type) and MoS2:Nb (p-type). The junctions exhibit a peak external quantum efficiency of 4.7% and a maximum open circuit voltage of 0.51 V; they are stable in air; and their rectification characteristics and photovoltaic response are in excellent agreement with the Shockley diode model. The gate-tunability of the maximum output power, the ideality factor and the shunt resistance indicate that the dark current is dominated by trap-assisted recombination and that the photocurrent collection depends strongly on the spatial extent of the space charge region. We demonstrate a response time faster than 80 ms and highlight the potential to integrate such devices into quasi-transparent and flexible optoelectronics.

Graphical abstract: Gate tunable photovoltaic effect in MoS2 vertical p–n homostructures

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Publication details

The article was received on 30 Oct 2016, accepted on 14 Dec 2016 and first published on 15 Dec 2016


Article type: Paper
DOI: 10.1039/C6TC04699A
Citation: J. Mater. Chem. C, 2017,5, 854-861
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    Gate tunable photovoltaic effect in MoS2 vertical p–n homostructures

    S. A. Svatek, E. Antolin, D. Lin, R. Frisenda, C. Reuter, A. J. Molina-Mendoza, M. Muñoz, N. Agraït, T. Ko, D. P. de Lara and A. Castellanos-Gomez, J. Mater. Chem. C, 2017, 5, 854
    DOI: 10.1039/C6TC04699A

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